发明申请
- 专利标题： CAPACITOR AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 电容器及其制造方法
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申请号： US11967200申请日： 2007-12-30
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公开(公告)号： US20080224264A1公开(公告)日： 2008-09-18
- 发明人: Jong-Bum PARK
- 申请人： Jong-Bum PARK
- 申请人地址： KR Ichon-shi
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Ichon-shi
- 优先权： KR10-2007-0026087 20070316
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L29/92
摘要：
A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer.
公开/授权文献
- US07871889B2 Capacitor and method for fabricating the same 公开/授权日：2011-01-18