发明申请
US20080227226A1 Semiconductor substrate, manufacturing method of a semiconductor device and testing method of a semiconductor device
审中-公开
半导体衬底，半导体器件的制造方法和半导体器件的测试方法
- 专利标题： Semiconductor substrate, manufacturing method of a semiconductor device and testing method of a semiconductor device
- 专利标题（中）： 半导体衬底，半导体器件的制造方法和半导体器件的测试方法
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申请号： US12153481申请日： 2008-05-20
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公开(公告)号： US20080227226A1公开(公告)日： 2008-09-18
- 发明人: Shigeru Fujii , Yoshikazu Arisaka , Hitoshi Izuru , Kazuhiro Tashiro , Shigeyuki Maruyama
- 申请人： Shigeru Fujii , Yoshikazu Arisaka , Hitoshi Izuru , Kazuhiro Tashiro , Shigeyuki Maruyama
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2004-328061 20041111
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/304
摘要：
A semiconductor substrate eliminates a restriction caused by a width of scribe lines so as to increase a number of semiconductor elements formed on the semiconductor substrate. A plurality of semiconductor element areas are formed by forming a plurality of unit exposed and printed areas, each of which contains the semiconductor element areas. A first scribe line extends between the semiconductor element areas formed within the unit exposed and printed area. A second scribe line extends between the unit exposed and printed areas. A width of the first scribe line is different from a width of the second scribe line.
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