发明申请
- 专利标题： Method of producing a semiconductor structure
- 专利标题（中）： 半导体结构的制造方法
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申请号： US11728196申请日： 2007-03-23
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公开(公告)号： US20080230839A1公开(公告)日： 2008-09-25
- 发明人: Joern Regul , Joerg Radecker , Olaf Storbeck , Kristin Schupke , Tobias Mono
- 申请人： Joern Regul , Joerg Radecker , Olaf Storbeck , Kristin Schupke , Tobias Mono
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/44 ; H01L29/94
摘要：
The invention is related to a method of producing a semiconductor structure comprising the steps of: fabricating a gate stack structure and oxidizing at least a portion of the gate stack structure's sidewalls, wherein the step of oxidizing is carried out at a temperature below 500° C. using a process gas which comprises oxygen radicals.
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