发明申请
US20080233697A1 Multiple-gate MOSFET device and associated manufacturing methods
有权
多栅MOSFET器件及相关制造方法
- 专利标题： Multiple-gate MOSFET device and associated manufacturing methods
- 专利标题（中）： 多栅MOSFET器件及相关制造方法
-
申请号： US11726516申请日： 2007-03-22
-
公开(公告)号： US20080233697A1公开(公告)日： 2008-09-25
- 发明人: Craig Henry Huffman , Weize Xiong , Cloves Rinn Cleavelin
- 申请人： Craig Henry Huffman , Weize Xiong , Cloves Rinn Cleavelin
- 专利权人： Texas Instruments Inc.
- 当前专利权人： Texas Instruments Inc.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.
公开/授权文献
信息查询
IPC分类:
