发明申请
US20080237603A1 METHOD OF FORMING CMOS TRANSISTORS WITH DUAL-METAL SILICIDE FORMED THROUGH THE CONTACT OPENINGS AND STRUCTURES FORMED THEREBY
有权
通过接触开口形成的双金属硅化物形成CMOS晶体的方法及其形成的结构
- 专利标题： METHOD OF FORMING CMOS TRANSISTORS WITH DUAL-METAL SILICIDE FORMED THROUGH THE CONTACT OPENINGS AND STRUCTURES FORMED THEREBY
- 专利标题（中）： 通过接触开口形成的双金属硅化物形成CMOS晶体的方法及其形成的结构
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申请号： US11693608申请日： 2007-03-29
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公开(公告)号： US20080237603A1公开(公告)日： 2008-10-02
- 发明人: Saurabh Lodha , Pushkar Ranade , Christopher Auth
- 申请人： Saurabh Lodha , Pushkar Ranade , Christopher Auth
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Methods and associated structures of forming a microelectronic device are described. Those methods may include amorphizing at least one contact area of a source/drain region of a transistor structure by implanting through at least one contact opening, forming a first layer of metal on the at least one contact area, forming a second layer of metal on the first layer of metal, selectively etching a portion of the second metal layer, and annealing the at least one contact area to form at least one silicide.