发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12058114申请日： 2008-03-28
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公开(公告)号： US20080237605A1公开(公告)日： 2008-10-02
- 发明人: Tomohiro MURATA , Masayuki KURODA , Tetsuzo UEDA
- 申请人： Tomohiro MURATA , Masayuki KURODA , Tetsuzo UEDA
- 优先权： JP2007-087370 20070329
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/336
摘要：
A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening for exposing the first semiconductor layer; and a source electrode and a drain electrode which are formed on the cap layer so as to oppose to each other with the opening interposed. A gate electrode is formed on the bottom face of the opening with an insulating film interposed. The insulating film is formed on at least a part of the first semiconductor layer which is exposed through the opening.
公开/授权文献
- US07800116B2 Group III-nitride semiconductor device with a cap layer 公开/授权日：2010-09-21
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