发明申请
US20080237694A1 Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory module
审中-公开
集成电路，电池，电池布置，集成电路的制造方法，电池的制造方法，存储器模块
- 专利标题： Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory module
- 专利标题（中）： 集成电路，电池，电池布置，集成电路的制造方法，电池的制造方法，存储器模块
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申请号： US11728960申请日： 2007-03-27
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公开(公告)号： US20080237694A1公开(公告)日： 2008-10-02
- 发明人: Michael Specht , Nicolas Nagel , Josef Willer
- 申请人： Michael Specht , Nicolas Nagel , Josef Willer
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
The invention relates to integrated circuits, to a cell, to a cell arrangement, to a method for manufacturing an integrated circuit, to a method for manufacturing a cell, and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a cell, the cell including a low-k dielectric layer, a first high-k dielectric layer disposed above the low-k dielectric layer, a charge trapping layer disposed above the first high-k dielectric layer, and a second high-k dielectric layer disposed above the charge trapping layer.
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