发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器件
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申请号： US11860956申请日： 2007-09-25
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公开(公告)号： US20080237695A1公开(公告)日： 2008-10-02
- 发明人: Tomoaki SHINO , Akihiro Nitayama , Takeshi Hamamoto , Hideaki Aochi , Takashi Ohsawa , Ryo Fukuda
- 申请人： Tomoaki SHINO , Akihiro Nitayama , Takeshi Hamamoto , Hideaki Aochi , Takashi Ohsawa , Ryo Fukuda
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-268769 20060929
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
This disclosure concerns a memory comprising a charge trapping film; a gate insulating film; a back gate on the charge trapping film; a front gate on the gate insulating film; and a body region provided between a drain and a source, wherein the memory includes a first storage state for storing data depending on the number of majority carriers in the body region and a second storage state for storing data depending on the amount of charges in the charge trapping film, and the memory is shifted from the first storage state to the second storage state by converting the number of majority carriers in the body region into the amount of charges in the charge trapping film or from the second storage state to the first storage state by converting the amount of charges in the charge trapping film into the number of majority carriers in the body region.
公开/授权文献
- US07609551B2 Semiconductor memory device 公开/授权日：2009-10-27
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