Invention Application
US20080237741A1 METHODS OF FORMING IMPROVED EPI FILL ON NARROW ISOLATION BOUNDED SOURCE/DRAIN REGIONS AND STRUCTURES FORMED THEREBY
审中-公开
形成改进的EPI填料的方法在窄分离边界源/排水区和形成的结构
- Patent Title: METHODS OF FORMING IMPROVED EPI FILL ON NARROW ISOLATION BOUNDED SOURCE/DRAIN REGIONS AND STRUCTURES FORMED THEREBY
- Patent Title (中): 形成改进的EPI填料的方法在窄分离边界源/排水区和形成的结构
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Application No.: US11694418Application Date: 2007-03-30
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Publication No.: US20080237741A1Publication Date: 2008-10-02
- Inventor: Pushkar Ranade , Keith Zawadzki , Christopher Auth
- Applicant: Pushkar Ranade , Keith Zawadzki , Christopher Auth
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include plasma etching a portion of a source/drain region of a transistor, and then selectively wet etching the source drain region along a (100) plane to form at least one (111) region in the recessed source/drain region.
Information query
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