Invention Application
- Patent Title: SEMICONDUCTOR OPTICAL SENSOR
- Patent Title (中): 半导体光电传感器
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Application No.: US12048239Application Date: 2008-03-14
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Publication No.: US20080237769A1Publication Date: 2008-10-02
- Inventor: Masao Okihara
- Applicant: Masao Okihara
- Applicant Address: JP Tokyo
- Assignee: OKI ELECTRIC INDUSTRY CO., LTD.
- Current Assignee: OKI ELECTRIC INDUSTRY CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2007089298 20070329
- Main IPC: H01L31/0216
- IPC: H01L31/0216

Abstract:
A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the silicon layer; a circuit element in the silicon layer; a first interlayer insulating film formed over the silicon layer; a first light-shielding film on the first interlayer film and having an opening in the photodiode forming region; and a first inter-region light-shielding plug arranged between the two regions, for connecting the silicon substrate and the first light-shielding film.
Public/Granted literature
- US08049291B2 Semiconductor optical sensor having an inter-region light-shielding plug Public/Granted day:2011-11-01
Information query
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