发明申请
US20080239787A1 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
有权
指向具有大电流和均匀电流的上行P-I-N二极管的大阵列
- 专利标题: LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
- 专利标题(中): 指向具有大电流和均匀电流的上行P-I-N二极管的大阵列
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申请号: US11692153申请日: 2007-03-27
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公开(公告)号: US20080239787A1公开(公告)日: 2008-10-02
- 发明人: S. Brad Herner
- 申请人: S. Brad Herner
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H01L27/08
摘要:
An upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium is disclosed. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array.
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