发明申请
US20080241357A1 METHOD FOR HEATING A SUBSTRATE PRIOR TO A VAPOR DEPOSITION PROCESS
有权
用于加热蒸发沉积过程中的基底的方法
- 专利标题： METHOD FOR HEATING A SUBSTRATE PRIOR TO A VAPOR DEPOSITION PROCESS
- 专利标题（中）： 用于加热蒸发沉积过程中的基底的方法
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申请号： US11692820申请日： 2007-03-28
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公开(公告)号： US20080241357A1公开(公告)日： 2008-10-02
- 发明人: Kenji Suzuki
- 申请人： Kenji Suzuki
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： C23C14/02
- IPC分类号： C23C14/02
摘要：
A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposition system, whereby the substrate is heated to a deposition temperature in a first gaseous atmosphere. Thereafter, the first gaseous atmosphere is displaced by a second gaseous atmosphere, and the pressure is adjusted to a deposition pressure. The second gaseous atmosphere comprises a gaseous composition that is substantially the same as the carrier gas utilized to transport film precursor vapor to the substrate and the optional dilution gas utilized to dilute the carrier gas and film precursor vapor.
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