发明申请
- 专利标题: METHOD FOR FORMING A CAPACITOR HAVING A COPPER ELECTRODE AND A HIGH SURFACE AREA ALUMINUM INNER LAYER
- 专利标题(中): 形成具有铜电极和高表面积铝内层的电容器的方法
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申请号: US11697477申请日: 2007-04-06
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公开(公告)号: US20080244885A1公开(公告)日: 2008-10-09
- 发明人: Gregory J. Dunn , Jovica Savic , Philip M. Lessner , Albert K. Harrington
- 申请人: Gregory J. Dunn , Jovica Savic , Philip M. Lessner , Albert K. Harrington
- 申请人地址: US IL Schaumburg US SC Greenville
- 专利权人: MOTOROLA, INC.,KEMET ELECTRONICS CORPORATION
- 当前专利权人: MOTOROLA, INC.,KEMET ELECTRONICS CORPORATION
- 当前专利权人地址: US IL Schaumburg US SC Greenville
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.
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