发明申请
- 专利标题: Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device
- 专利标题(中): 检测颗粒的方法及其装置或半导体器件的缺陷
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申请号: US12138889申请日: 2008-06-13
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公开(公告)号: US20080246964A1公开(公告)日: 2008-10-09
- 发明人: Hidetoshi NISHIYAMA , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 申请人: Hidetoshi NISHIYAMA , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo JP Tokyo
- 优先权: JP2000-291952 20000921
- 主分类号: G01N15/02
- IPC分类号: G01N15/02
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
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