A resistive random access memory (RRAM) device may include a first metal pattern on a substrate, a first insulating layer on the first metal pattern and on the substrate, an electrode, a second insulating layer on the first insulating layer, a resistive memory layer, and a second metal pattern. Portions of the first metal pattern may be between the substrate and the first insulating layer, and the first insulating layer may have a first opening therein exposing a portion of the first metal pattern. The electrode may be in the opening with the electrode being electrically coupled with the exposed portion of the first metal pattern. The first insulating layer may be between the second insulating layer and the substrate, and the second insulating layer may have a second opening therein exposing a portion of the electrode. The resistive memory layer may be on side faces of the second opening and on portions of the electrode, and the second metal pattern may be in the second opening with the resistive memory layer between the second metal pattern and the side faces of the second opening and between the second metal pattern and the electrode. Related methods are also discussed.