发明申请
- 专利标题： Method for Controlling Phase Angle of a Mask by Post-Treatment
- 专利标题（中）： 通过后处理控制面膜相位角的方法
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申请号： US11697015申请日： 2007-04-05
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公开(公告)号： US20080248404A1公开(公告)日： 2008-10-09
- 发明人: Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
- 申请人： Chun-Lang Chen , Tran-Hui Shen , Fei-Gwo Tsai , Chien-Chao Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.