发明申请
- 专利标题: Method for manufacturing a transistor
- 专利标题(中): 制造晶体管的方法
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申请号: US11786822申请日: 2007-04-13
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公开(公告)号: US20080251815A1公开(公告)日: 2008-10-16
- 发明人: Matthias Goldbach , Erhard Landgraf , Michael Stadtmueller , Moritz Haupt , Sven Schmidbauer , Tobias Mono , Jorg Radecker
- 申请人: Matthias Goldbach , Erhard Landgraf , Michael Stadtmueller , Moritz Haupt , Sven Schmidbauer , Tobias Mono , Jorg Radecker
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
The present invention relates to a transistor comprising a gate channel area and a gate stack having mechanical stress arranged on the gate channel area.