发明申请
- 专利标题： METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 形成图案的方法，制造半导体器件和半导体器件的方法
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申请号： US12101532申请日： 2008-04-11
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公开(公告)号： US20080251844A1公开(公告)日： 2008-10-16
- 发明人: Akihiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
- 申请人： Akihiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-106864 20070416
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.
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