发明申请
- 专利标题: Semiconductor having passivated sidewalls
- 专利标题(中): 具有钝化侧壁的半导体
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申请号: US11784872申请日: 2007-04-10
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公开(公告)号: US20080251891A1公开(公告)日: 2008-10-16
- 发明人: Yeong-Chang Chou , Peter S. Nam , Chun H. Lin , Augusto Gutierrez , Jeffrey Ming-Jer Yang , Michael Wojtowicz
- 申请人: Yeong-Chang Chou , Peter S. Nam , Chun H. Lin , Augusto Gutierrez , Jeffrey Ming-Jer Yang , Michael Wojtowicz
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L21/00
摘要:
The layers of a semiconductor device have exposed edges. The layers that are susceptible to oxidation are protected from oxidation by coating them with a nitride passivation layer. The nitride passivation layer can be applied using plasma enhanced chemical vapor deposition (PECVD). A method of making a passivated sidewall semiconductor includes the steps of applying a nitride or other protective material over a wafer using PECVD or other appropriate deposition method.
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