发明申请
US20080251891A1 Semiconductor having passivated sidewalls 审中-公开
具有钝化侧壁的半导体

Semiconductor having passivated sidewalls
摘要:
The layers of a semiconductor device have exposed edges. The layers that are susceptible to oxidation are protected from oxidation by coating them with a nitride passivation layer. The nitride passivation layer can be applied using plasma enhanced chemical vapor deposition (PECVD). A method of making a passivated sidewall semiconductor includes the steps of applying a nitride or other protective material over a wafer using PECVD or other appropriate deposition method.
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