发明申请
- 专利标题： Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon and method for manufacturing tunneling magnetoresistive sensor
- 专利标题（中）： 包括自由磁性层和设置在其上的镁保护层的隧道磁传感器及其制造隧道磁阻传感器的方法
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申请号： US11888762申请日： 2007-08-02
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公开(公告)号： US20080253038A1公开(公告)日： 2008-10-16
- 发明人: Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa
- 申请人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa
- 专利权人： ALPS ELECTRIC CO., LTD.
- 当前专利权人： ALPS ELECTRIC CO., LTD.
- 优先权： JP2006-234464 20060830
- 主分类号： G11B5/33
- IPC分类号： G11B5/33
摘要：
A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.
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