发明申请
US20080254269A1 NbO Capacitors With Improved Performance And Higher Working Voltages
审中-公开
NbO电容器具有改进的性能和更高的工作电压
- 专利标题： NbO Capacitors With Improved Performance And Higher Working Voltages
- 专利标题（中）： NbO电容器具有改进的性能和更高的工作电压
-
申请号： US12062738申请日： 2008-04-04
-
公开(公告)号： US20080254269A1公开(公告)日： 2008-10-16
- 发明人: Yuri Freeman , Philip M. Lessner , Jeffrey Poltorak , Randolph S. Hahn
- 申请人： Yuri Freeman , Philip M. Lessner , Jeffrey Poltorak , Randolph S. Hahn
- 主分类号： B32B9/00
- IPC分类号： B32B9/00 ; B32B7/02 ; B05D5/12
摘要：
A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.
信息查询
