发明申请
- 专利标题： Void-free contact plug
- 专利标题（中）： 无空隙接触插头
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申请号： US11733519申请日： 2007-04-10
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公开(公告)号： US20080254617A1公开(公告)日： 2008-10-16
- 发明人: Olubunmi O. Adetutu , Elsie D. Banks , Jeffrey W. Thomas
- 申请人： Olubunmi O. Adetutu , Elsie D. Banks , Jeffrey W. Thomas
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor device manufacturing process for forming a contact plug includes sequentially depositing a titanium or tantalum contact layer (30), a titanium nitride barrier layer (40), and a tungsten seed layer (50) in a contact opening (24). The contact hole (24) is then filled up from a bottom surface of the contact opening by electroplating a copper layer (60) so that no voids are formed in the contact opening (24). Any excess metal is removed with a CMP process to form the contact plugs (70), where the CMP process may also used to thin or remove one or more of the contact/seed/barrier layers (30, 40, 50).
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