发明申请
- 专利标题: SUBSTRATE PROCESSING METHOD
- 专利标题(中): 基板处理方法
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申请号: US12100450申请日: 2008-04-10
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公开(公告)号: US20080254719A1公开(公告)日: 2008-10-16
- 发明人: Atsushi SHIGETA , Dai Fukushima , Hiroyuki Yano
- 申请人: Atsushi SHIGETA , Dai Fukushima , Hiroyuki Yano
- 优先权: JP2007-104068 20070411
- 主分类号: B24B1/00
- IPC分类号: B24B1/00
摘要:
In a substrate processing method of polishing a periphery of a substrate, in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface. Moreover, in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface.