公开(公告)号：US08568199B2

公开(公告)日：2013-10-29

申请号：US12897973

申请日：2010-10-05

申请人： Shinrou Ohta ,  Atsushi Shigeta

发明人： Shinrou Ohta ,  Atsushi Shigeta

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B37/013 ,  B24B37/042

摘要： Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

摘要翻译： 提供了用于基于抛光速率的变化来检测基板的精确抛光终点的方法和装置。 该方法包括：将光施加到衬底的表面并接收来自衬底的反射光; 以预定的时间间隔获得多个光谱轮廓，每个光谱轮廓指示反射光的每个波长处的反射强度; 从所获得的多个光谱分布中选择至少一对光谱分布，包括最新的光谱分布; 计算所选择的光谱轮廓之间的预定波长处的反射强度的差; 从所述差确定反射强度的变化量; 以及基于变化量确定抛光端点。

公开(公告)号：US08152598B2

公开(公告)日：2012-04-10

申请号：US12266069

申请日：2008-11-06

申请人： Dai Fukushima ,  Atsushi Shigeta

发明人： Dai Fukushima ,  Atsushi Shigeta

IPC分类号： B24B41/00

CPC分类号： B24B9/065 ,  B24B21/002

摘要： A substrate treating method includes rotating a substrate in a circumferential direction and polishing a peripheral portion of the substrate by pressing a polishing member to it using a pressing mechanism having a pressing pad. An angle of at least a part of the pressing pad with respect to an axial direction, in which the pressing mechanism makes the pressing pad press the peripheral portion of the substrate, is changed by an angle displacement mechanism which actively displaces the angle so that the polishing is performed depending on a surface to be polished in the peripheral portion.

摘要翻译： 基板处理方法包括：使用具有按压垫的按压机构，将基板沿周向旋转并且对基板的周边部分进行冲压研磨部件。 按压垫的至少一部分相对于轴向的角度，其中按压机构使按压垫按压基板的周边部分，由角度位移机构改变，该角度位移机构主动地移动角度，使得 根据周边部分中要抛光的表面进行抛光。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US20090068841A1

公开(公告)日：2009-03-12

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20080113590A1

公开(公告)日：2008-05-15

申请号：US11984057

申请日：2007-11-13

申请人： Takeo Kubota ,  Atsushi Shigeta ,  Dai Fukushima

发明人： Takeo Kubota ,  Atsushi Shigeta ,  Dai Fukushima

IPC分类号： B24B7/04 ,  B24B41/06

CPC分类号： B24B9/065

摘要： A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.

摘要翻译： 公开了一种在其周边部分具有抛光对象表面的半导体晶片的抛光方法。 该方法包括：在半导体晶片沿圆周方向旋转的同时，通过多个按压部沿着半导体晶片的圆周将抛光构件压靠在抛光对象表面上，从而研磨半导体晶片的抛光对象表面。

公开(公告)号：US20070264822A1

公开(公告)日：2007-11-15

申请号：US11604786

申请日：2006-11-28

申请人： Takeo Kubota ,  Atsushi Shigeta ,  Kaori Yomogihara ,  Makoto Honda ,  Hirokazu Ezawa

发明人： Takeo Kubota ,  Atsushi Shigeta ,  Kaori Yomogihara ,  Makoto Honda ,  Hirokazu Ezawa

IPC分类号： H01L21/316 ,  H01L21/324

CPC分类号： H01L21/268 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28518 ,  H01L21/31654 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/67115 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684

摘要： A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.

摘要翻译： 周边加工方法包括：通过局部加热包括硅基底材的工件的周边中的至少一种，并选择性地向外围供应反应活化物质，允许外围的氧化速率高于自然氧化膜的氧化速率 在硅基基板的表面上，由此沿着周边形成第一氧化膜，第一氧化膜比天然氧化膜厚。 一种制造半导体器件的方法包括：在硅基衬底的前面和周围形成绝缘膜; 通过选择性地蚀刻掉绝缘膜以暴露硅基衬底的前侧的一部分来形成工件; 在硅基基板的暴露部分形成第一氧化物膜，在选择性蚀刻期间，暴露部分形成在周边的绝缘膜中; 在形成第一氧化膜之后，在工件的前侧沉积金属膜; 并通过热处理使金属膜与硅基基板的前侧的部分反应。

公开(公告)号：US20070239309A1

公开(公告)日：2007-10-11

申请号：US11730891

申请日：2007-04-04

申请人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

发明人： Mitsuo Tada ,  Taro Takahashi ,  Motohiro Niijima ,  Shinro Ohta ,  Atsushi Shigeta

IPC分类号： G06F19/00

CPC分类号： B24B37/005 ,  B24B49/105 ,  B24B49/12

摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.

摘要翻译： 抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。 抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器 以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。