发明申请
- 专利标题: Interposer and electronic device fabrication method
- 专利标题(中): 内插器和电子器件制造方法
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申请号: US12213321申请日: 2008-06-18
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公开(公告)号: US20080257487A1公开(公告)日: 2008-10-23
- 发明人: Takeshi Shioga , Yoshikatsu Ishizuki , John David Baniecki , Kazuaki Kurihara
- 申请人: Takeshi Shioga , Yoshikatsu Ishizuki , John David Baniecki , Kazuaki Kurihara
- 申请人地址: JP Kawasaki
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2005-287065 20050930
- 主分类号: B32B38/10
- IPC分类号: B32B38/10
摘要:
An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
公开/授权文献
- US07937830B2 Interposer and electronic device fabrication method 公开/授权日:2011-05-10
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