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公开(公告)号：US20080257487A1
公开(公告)日：2008-10-23
申请号：US12213321
申请日：2008-06-18
IPC分类号： B32B38/10
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译： 插入件2包括由多个树脂层26,34,42,52,56形成的基座10; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到薄膜电容器12的各个上电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。
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公开(公告)号：US07937830B2
公开(公告)日：2011-05-10
申请号：US12213321
申请日：2008-06-18
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译： 插入件2包括由多个树脂层26,34,42,52,56形成的基座10; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下部电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到相应的上部电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由布线48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 14b通过互连48电互连。
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公开(公告)号：US07355290B2
公开(公告)日：2008-04-08
申请号：US11338857
申请日：2006-01-25
申请人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
IPC分类号： H01L23/29
CPC分类号： H01L23/50 , H01L21/4846 , H01L21/4857 , H01L21/6835 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/162 , H05K1/165 , H05K3/0023 , H05K3/0044 , H05K3/20 , H05K3/4614 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/09481 , H05K2201/09509 , H05K2201/096 , H05K2201/09763 , H05K2201/10674 , H05K2203/016 , H05K2203/0733 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599
摘要： The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.
摘要翻译： 插入件包括由多个树脂层68,20,32,48形成的基座8; 掩埋在所述多个树脂层的第一树脂层68和所述多个树脂层的第二树脂层20之间的薄膜电容器18a，18b，其包括第一电容器电极12a，12b，第二电容器电极16 与第一电容器电极12a，12b和第二电容器电极16相对，以及形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200或更大的电容器电介质膜14 ; 通过基座8形成并电连接到第一电容器电极12a，12b的第一贯通电极77a; 以及通过基底8形成并电连接到第二电容器电极16的第二贯通电极77b。
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公开(公告)号：US07614142B2
公开(公告)日：2009-11-10
申请号：US12068272
申请日：2008-02-05
申请人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
CPC分类号： H01L23/50 , H01L21/4846 , H01L21/4857 , H01L21/6835 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/162 , H05K1/165 , H05K3/0023 , H05K3/0044 , H05K3/20 , H05K3/4614 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/09481 , H05K2201/09509 , H05K2201/096 , H05K2201/09763 , H05K2201/10674 , H05K2203/016 , H05K2203/0733 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599
摘要： A method for fabricating an interposer includes: forming on one primary surface of a first substrate a thin-film capacitor including a first capacitor electrode, a crystalline capacitor dielectric film formed on the first electrode and a second capacitor electrode formed on the dielectric film; and forming on the primary surface of the first substrate and the capacitor a first layer as semi-cured, and a first partial electrode to be a part of a through-electrode, buried in the first resin layer and electrically connected to the first electrode or the second electrode. The method further includes cutting an upper part of the first partial electrode and an upper part of the first resin layer with a cutting tool; forming on one primary surface of a second substrate a second resin layer as semi-cured, and a second partial electrode to be a part of the through-electrode, buried in the second resin layer and disposed in alignment with the first partial electrode; cutting an upper part of the second partial electrode and an upper part of the second resin layer with a cutting tool; making thermal processing with the first resin layer and the second resin layer in close contact with each other to adhere the first resin and the second resin layer to each other while jointing the first and second partial electrodes to each other; removing the first substrate; forming on said one primary surface of the second substrate a third resin layer, covering the thin-film capacitor, burying a third partial electrode to be a part of the through-electrode in the third resin layer, supporting the third resin layer by a supporting substrate; and removing the second substrate.
摘要翻译： 一种用于制造插入件的方法，包括：在第一基板的一个主表面上形成薄膜电容器，薄膜电容器包括第一电容器电极，形成在第一电极上的晶体电容器电介质膜和形成在电介质膜上的第二电容器电极; 并且在第一基板和电容器的主表面上形成半固化的第一层，以及作为通孔的一部分的第一部分电极，埋入第一树脂层中并电连接到第一电极或 第二电极。 该方法还包括用切割工具切割第一部分电极的上部和第一树脂层的上部; 在第二基板的一个主表面上形成半固化的第二树脂层和作为所述通孔的一部分的第二部分电极，所述第二部分电极埋入所述第二树脂层中并与所述第一部分电极对准; 用切割工具切割第二部分电极的上部和第二树脂层的上部; 使第一树脂层和第二树脂层彼此紧密接触进行热处理，以将第一和第二部分电极彼此接合，使第一树脂和第二树脂层彼此粘合; 去除第一衬底; 在所述第二基板的所述一个主表面上形成覆盖所述薄膜电容器的第三树脂层，在所述第三树脂层中埋设作为所述贯通电极的一部分的第三部分电极，通过支撑所述第三树脂层 基质; 并移除第二基板。
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公开(公告)号：US07405366B2
公开(公告)日：2008-07-29
申请号：US11339661
申请日：2006-01-26
IPC分类号： H05K1/16
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 including a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further including: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译： 包括由多个树脂层26,34,42,52,56形成的基座10的插入件2; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下部电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到各个上部电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。
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公开(公告)号：US20080134499A1
公开(公告)日：2008-06-12
申请号：US12068272
申请日：2008-02-05
申请人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John David Baniecki , Kazuaki Kurihara
IPC分类号： H05K3/46
CPC分类号： H01L23/50 , H01L21/4846 , H01L21/4857 , H01L21/6835 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/162 , H05K1/165 , H05K3/0023 , H05K3/0044 , H05K3/20 , H05K3/4614 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/09481 , H05K2201/09509 , H05K2201/096 , H05K2201/09763 , H05K2201/10674 , H05K2203/016 , H05K2203/0733 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599
摘要： The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.
摘要翻译： 插入件包括由多个树脂层68,20,32,48形成的基座8; 掩埋在所述多个树脂层的第一树脂层68和所述多个树脂层的第二树脂层20之间的薄膜电容器18a，18b，其包括第一电容器电极12a，12b，第二电容器电极16 与第一电容器电极12a，12b和第二电容器电极16相对，以及形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200或更大的电容器电介质膜14 ; 通过基座8形成并电连接到第一电容器电极12a，12b的第一贯通电极77a; 以及通过基底8形成并电连接到第二电容器电极16的第二贯通电极77b。
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公开(公告)号：US20070076348A1
公开(公告)日：2007-04-05
申请号：US11339661
申请日：2006-01-26
IPC分类号： H01G4/236
CPC分类号： H01G4/30 , H01G4/232 , H01L21/6835 , H01L2221/68345 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2224/16265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H05K1/112 , H05K1/141 , H05K1/162 , H05K3/007 , H05K3/4602 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/10378 , H05K2201/10674 , H05K2203/016 , H05K2203/0191 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49153 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599
摘要： An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.
摘要翻译： 插入件2包括由多个树脂层26,34,42,52,56形成的基座10; 埋在基座10中的薄膜电容器12，包括下电极20，电容器电介质膜22和上电极24; 通过基底10形成并与薄膜电容器12的上部电极24电连接的第一贯通电极14b; 以及通过基底10形成并电连接到薄膜电容器12的下电极20的第二贯通电极14a，还包括：埋入基座10中并电连接到薄膜电容器12的各个上电极24的互连件48 多个薄膜电容器12，多个第一贯通电极14b经由互连件48与所述多个薄膜电容器12的上部电极24电连接，所述多个第一贯通电极 - 电极14b通过互连48电互连。
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公开(公告)号：US20070090546A1
公开(公告)日：2007-04-26
申请号：US11338857
申请日：2006-01-25
申请人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John Baniecki , Kazuaki Kurihara
发明人： Takeshi Shioga , Yoshikatsu Ishizuki , Kanae Nakagawa , Taiji Sakai , Masataka Mizukoshi , John Baniecki , Kazuaki Kurihara
IPC分类号： H01L23/29
CPC分类号： H01L23/50 , H01L21/4846 , H01L21/4857 , H01L21/6835 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/162 , H05K1/165 , H05K3/0023 , H05K3/0044 , H05K3/20 , H05K3/4614 , H05K2201/0175 , H05K2201/0179 , H05K2201/0317 , H05K2201/09481 , H05K2201/09509 , H05K2201/096 , H05K2201/09763 , H05K2201/10674 , H05K2203/016 , H05K2203/0733 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599
摘要： The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.
摘要翻译： 插入件包括由多个树脂层68,20,32,48形成的基座8; 掩埋在所述多个树脂层的第一树脂层68和所述多个树脂层的第二树脂层20之间的薄膜电容器18a，18b，其包括第一电容器电极12a，12b，第二电容器电极16 与第一电容器电极12a，12b和第二电容器电极16相对，以及形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200或更大的电容器电介质膜14 ; 通过基座8形成并电连接到第一电容器电极12a，12b的第一贯通电极77a; 以及通过基底8形成并电连接到第二电容器电极16的第二贯通电极77b。
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9.发明授权Method for processing a base that includes connecting a first base to a second base with an insulating film 有权用于处理基底的方法，其包括用绝缘膜将第一基底连接到第二基底公开(公告)号：US07514295B2
公开(公告)日：2009-04-07
申请号：US11196487
申请日：2005-08-04
IPC分类号： H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L24/02 , H01L24/06 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05578 , H01L2224/06102 , H01L2224/1134 , H01L2224/1147 , H01L2224/1184 , H01L2224/13028 , H01L2224/13082 , H01L2224/13144 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/13664 , H01L2224/13669 , H01L2224/16106 , H01L2224/16225 , H01L2224/2784 , H01L2224/32225 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81191 , H01L2224/83121 , H01L2224/83191 , H01L2224/83856 , H01L2924/00 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/13091 , H01L2924/19041 , Y10T29/49126 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099
摘要： The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
摘要翻译： 本发明实现了一种高可靠性的半导体器件，其允许在低负载和低成本下形成具有均匀高度，平坦和平滑的金属端子并且以低损伤安装。 电极5和绝缘膜6均由具有固体特性的材料形成，并且在室温下不显示粘合性，并且在不低于第一温度的温度下显示粘附性，并且在不低于 第二温度高于第一温度。 半导体芯片1a的电极5和绝缘膜6的表面与硬质切削工具一样平坦化，如金刚石等。
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公开(公告)号：US5783639A
公开(公告)日：1998-07-21
申请号：US781385
申请日：1997-01-13
申请人： Hideaki Kataoka , Eiko Yuda , Shigemitsu Kamiya , Masahide Yamamoto , Yoshikatsu Ishizuki , Yasuhiro Yoneda , Daisuke Mizutani , Kishio Yokouchi
发明人： Hideaki Kataoka , Eiko Yuda , Shigemitsu Kamiya , Masahide Yamamoto , Yoshikatsu Ishizuki , Yasuhiro Yoneda , Daisuke Mizutani , Kishio Yokouchi
IPC分类号： C08F255/08 , C08F283/14 , C08G59/32 , C08G59/34 , C08G61/08 , C08L51/00 , C08L51/06 , C08L51/08 , G03F7/004 , G03F7/012 , G03F7/038 , H01B3/40 , H01B3/44 , H05K1/00 , H05K3/28
CPC分类号： C08G59/027 , C08F255/08 , C08F283/14 , C08G59/3218 , C08G61/08 , C08L51/00 , C08L51/06 , C08L51/08 , G03F7/0045 , G03F7/0125 , G03F7/038 , H01B3/40 , H01B3/441 , H05K3/285 , H05K3/4676
摘要： A resin composition comprising an epoxy group-containing cycloolefin resin and a crosslinking agent is provided. More specifically, a resin composition comprising an epoxy group-containing thermoplastic norbornene resin obtained by introducing epoxy groups into a thermoplastic norbornene resin, and as the crosslinking agent, a curing agent for epoxy resins or a photoreactive substance is provided. The resin composition is suitable for use as an insulating material.
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