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发明申请
US20080257715A1 Method of Deposition with Reduction of Contaminants in An Ion Assist Beam and Associated Apparatus 审中-公开
在离子辅助束和相关装置中减少污染物的沉积方法

Method of Deposition with Reduction of Contaminants in An Ion Assist Beam and Associated Apparatus
摘要：
The invention relates to a dual Ion Beam Sputtering method for depositing onto a substrate (S) material generated by the sputtering of a target (121-123) by a sputtering ion beam (110), said method comprising the operation of an assistance ion beam (130) directed onto said substrate in order to assist the deposition of material, said method being characterized in that during the operation of said assistance beam said sputtering beam is also operated in association with said assistance beam, and during said operation of the sputtering beam in association with the assistance beam the sputtering beam crosses a desired part of the assistance beam in order to transport contaminants associated to said desired part of the assistance beam away from said substrate.
摘要（中）：

本发明涉及一种用于沉积到通过溅射离子束（110）溅射靶（121-123）而产生的衬底（S）上的双离子束溅射方法，所述方法包括辅助离子束 （130），以便辅助沉积材料，所述方法的特征在于，在所述辅助束的操作期间，所述溅射束还与所述辅助光束相关联地操作，并且在溅射束的所述操作期间 与辅助束相关联，溅射束与辅助光束的期望部分交叉，以便将与所述辅助光束的所需部分相关联的污染物输送离开所述衬底。

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