摘要:
The invention relates to X-ray analytical instruments (RX), more precisely a device for providing a high energy X-ray beam, typically above 4 keV, for X-ray analysis applications. The device comprises an X-ray tube with a turning anode and an X-ray lens for shaping the beam.
摘要:
The invention relates to X-ray analytical instruments (RX), more precisely a device for providing a high energy X-ray beam, typically above 4 keV, for X-ray analysis applications. The device comprises an X-ray tube with a turning anode and an X-ray lens for shaping the beam.
摘要:
The invention relates to a dual Ion Beam Sputtering method for depositing onto a substrate (S) material generated by the sputtering of a target (121-123) by a sputtering ion beam (110), said method comprising the operation of an assistance ion beam (130) directed onto said substrate in order to assist the deposition of material, said method being characterized in that during the operation of said assistance beam said sputtering beam is also operated in association with said assistance beam, and during said operation of the sputtering beam in association with the assistance beam the sputtering beam crosses a desired part of the assistance beam in order to transport contaminants associated to said desired part of the assistance beam away from said substrate.