发明申请
- 专利标题： Image Sensor and Method for Manufacturing the Same
- 专利标题（中）： 图像传感器及其制造方法
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申请号： US11842590申请日： 2007-08-21
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公开(公告)号： US20080258248A1公开(公告)日： 2008-10-23
- 发明人: TAE GYU KIM
- 申请人： TAE GYU KIM
- 优先权： KR10-2007-0037357 20070417
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L21/00
摘要：
An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.
公开/授权文献
- US07812350B2 Image sensor and method for manufacturing the same 公开/授权日：2010-10-12
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