发明申请
- 专利标题: Electromigration Aggravated Electrical Fuse Structure
- 专利标题(中): 电迁移加重电气保险丝结构
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申请号: US11738868申请日: 2007-04-23
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公开(公告)号: US20080258255A1公开(公告)日: 2008-10-23
- 发明人: Po-Yao Ker , Shine Chung
- 申请人: Po-Yao Ker , Shine Chung
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L29/00
摘要:
A fuse structure with aggravated electromigration effect is disclosed, which comprises an anode area overlaying a first plurality of contacts that are coupled to a positively high voltage during a programming of the fuse structure, a cathode area overlaying a second plurality of contacts that are coupled to a complementary low voltage during a programming of the fuse structure, and a fuse link area having a first and second end, wherein the first end contacts the anode area at a predetermined distance to the nearest of the first plurality of contacts, and the second end contacts the cathode area at the predetermined distance to the nearest of the second plurality of contacts, wherein the cathode area is smaller than the anode area for the aggravating electromigration effect.
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