发明申请
US20080258303A1 Novel structure for reducing low-k dielectric damage and improving copper EM performance
审中-公开
用于降低低k电介质损伤和提高铜电感性能的新型结构
- 专利标题： Novel structure for reducing low-k dielectric damage and improving copper EM performance
- 专利标题（中）： 用于降低低k电介质损伤和提高铜电感性能的新型结构
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申请号： US11788986申请日： 2007-04-23
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公开(公告)号： US20080258303A1公开(公告)日： 2008-10-23
- 发明人: Ming-Shih Yeh , Tien-I Bao , David Ding-Chung Lu
- 申请人： Ming-Shih Yeh , Tien-I Bao , David Ding-Chung Lu
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/44
摘要：
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a dielectric layer; a chemical mechanical polish (CMP) stop layer on the dielectric layer; a conductive wiring in the dielectric layer; and a metal cap over the conductive wiring.