发明申请
- 专利标题: Programming a NAND flash memory with reduced program disturb
- 专利标题(中): 编程NAND闪存,减少程序干扰
-
申请号: US11806111申请日: 2007-05-30
-
公开(公告)号: US20080259684A1公开(公告)日: 2008-10-23
- 发明人: Mark Shlick , Mark Murin
- 申请人: Mark Shlick , Mark Murin
- 专利权人: SANDISK IL LTD.
- 当前专利权人: SANDISK IL LTD.
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/06
摘要:
When a memory device receives two or more pluralities of bits from a host to store in a nonvolatile memory, the device first stores the bits in a volatile memory. Then, in storing the bits in the nonvolatile memory, the device raises the threshold voltages of some cells of the volatile memory to values above a verify voltage. While those threshold voltages remain substantially at those levels, the device raises the threshold voltages of other cells of the volatile memory to values below the verify voltage. In the end, every cell stores one or more bits from each plurality of bits. Preferably, all the cells share a common wordline. A data storage device operates similarly with respect to storing pluralities of bits generated by an application running on the system.
公开/授权文献
信息查询