发明申请
- 专利标题： TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER
- 专利标题（中）： 隧道电磁元件，包括带有非金属金属层的多层无磁层
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申请号： US11866609申请日： 2007-10-03
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公开(公告)号： US20080261082A1公开(公告)日： 2008-10-23
- 发明人: Kazumasa Nishimura , Ryo Nakabayashi , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa , Yoshihiro Nishiyama , Akio Hanada , Hidekazu Kobayashi
- 申请人： Kazumasa Nishimura , Ryo Nakabayashi , Yosuke Ide , Masahiko Ishizone , Masamichi Saito , Naoya Hasegawa , Yoshihiro Nishiyama , Akio Hanada , Hidekazu Kobayashi
- 优先权： JP2006-355019 20061228; JP2007-099278 20070405
- 主分类号： G11B5/706
- IPC分类号： G11B5/706
摘要：
A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.
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