发明申请
- 专利标题: METHOD FOR MANUFACTURING A SEMICONDUCTOR PRESSURE SENSOR
- 专利标题(中): 制造半导体压力传感器的方法
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申请号: US12163110申请日: 2008-06-27
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公开(公告)号: US20080261345A1公开(公告)日: 2008-10-23
- 发明人: Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
- 申请人: Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
- 申请人地址: IT Agrate Brianza
- 专利权人: STMICROELECTRONICS S.R.L.
- 当前专利权人: STMICROELECTRONICS S.R.L.
- 当前专利权人地址: IT Agrate Brianza
- 优先权: EP04425197.3 20040319
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
公开/授权文献
- US08173513B2 Method for manufacturing a semiconductor pressure sensor 公开/授权日:2012-05-08