发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING PHOTOVOLTAIC ELEMENT
- 专利标题（中）： 制造半导体膜的方法和制造光伏元件的方法
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申请号： US12105469申请日： 2008-04-18
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公开(公告)号： US20080261347A1公开(公告)日： 2008-10-23
- 发明人: Akira Terakawa , Toshio Asaumi
- 申请人： Akira Terakawa , Toshio Asaumi
- 申请人地址： JP Moriguchi-shi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-shi
- 优先权： JP2007-112333 20070420
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/3205
摘要：
A method of manufacturing a semiconductor film capable of inhibiting the quality of a semiconductor film from destabilization is obtained. This method of manufacturing a semiconductor film includes steps of introducing source gas for a semiconductor, controlling the pressure of an atmosphere formed by the source gas to a prescribed level, heating a catalytic wire to at least a prescribed temperature after controlling the pressure of the atmosphere to the prescribed level and forming a semiconductor film by decomposing the source gas with the heated catalytic wire.
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