According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a first conductive layer on the first insulating film; forming a second insulating film on the first conductive layer in a first processing chamber isolated from an outside; performing a modification process on the second insulating film in the first processing chamber, and unloading the semiconductor substrate from the first processing chamber to the outside; annealing the second insulating film in a second processing chamber; and forming a second conductive layer on the second insulating film.