A multiple gate field-effect transistor is built from an overlapping mesh assembly. The assembly comprises a first layer comprising a semiconductor material formed into at least one fin, a least one source, and at least one drain. The first layer comprises a portion of a first mesh, electrically separated from the rest of the mesh. Similarly, a second layer is formed over the first layer and electrically isolated from the first layer, the second layer being electrically conductive and comprising a gate for the at least one fin of the transistor. The second layer comprises a portion of a second mesh offset from the first mesh and overlapping the first mesh, the second layer of the MuGFET device electrically separated from the rest of the second mesh.