发明申请
US20080265330A1 TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIFIC CONTACT DESIGN
有权
通过晶体管特殊接触设计提高晶体管性能的技术
- 专利标题: TECHNIQUE FOR ENHANCING TRANSISTOR PERFORMANCE BY TRANSISTOR SPECIFIC CONTACT DESIGN
- 专利标题(中): 通过晶体管特殊接触设计提高晶体管性能的技术
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申请号: US11964494申请日: 2007-12-26
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公开(公告)号: US20080265330A1公开(公告)日: 2008-10-30
- 发明人: Martin Gerhardt , Ralf Richter , Thomas Feudel , Uwe Griebenow
- 申请人: Martin Gerhardt , Ralf Richter , Thomas Feudel , Uwe Griebenow
- 优先权: DE102007020258.1 20070430
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.