发明申请
US20080265342A1 TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME
审中-公开
双位闪存存储器单元及其制造方法
- 专利标题： TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 双位闪存存储器单元及其制造方法
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申请号： US11780482申请日： 2007-07-20
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公开(公告)号： US20080265342A1公开(公告)日： 2008-10-30
- 发明人: Ming-Cheng Chang , Wei-Ming Liao , Jer-Chyi Wang , Chien-Chang Huang
- 申请人： Ming-Cheng Chang , Wei-Ming Liao , Jer-Chyi Wang , Chien-Chang Huang
- 优先权： TW096114415 20070424
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A two-bit flash memory cell includes a substrate, a gate oxide layer disposed on the substrate, a T-shaped gate on the gate oxide layer. A first charge storage layer is disposed at one side of and under the T-shaped gate. A second charge storage layer, which is separated from the first charge storage layer by a bottom portion of the T-shaped gate and the gate oxide layer, is disposed at the other side of and under the T-shaped gate. An insulating layer is disposed between the T-shaped gate and the gate oxide layer. A first source/drain region is disposed at one side of the T-shaped gate within the substrate. A second source/drain region is disposed at the other side of the T-shaped gate within the substrate.
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