发明申请
US20080265377A1 AIR GAP WITH SELECTIVE PINCHOFF USING AN ANTI-NUCLEATION LAYER
审中-公开
使用反核层的选择性PINCHOFF的空气隙
- 专利标题： AIR GAP WITH SELECTIVE PINCHOFF USING AN ANTI-NUCLEATION LAYER
- 专利标题（中）： 使用反核层的选择性PINCHOFF的空气隙
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申请号： US11741908申请日： 2007-04-30
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公开(公告)号： US20080265377A1公开(公告)日： 2008-10-30
- 发明人: Lawrence A. Clevenger , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth , Gregory Breyta
- 申请人： Lawrence A. Clevenger , Matthew E. Colburn , Daniel C. Edelstein , Shom Ponoth , Gregory Breyta
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L29/06
摘要：
A method of forming cavities within a semiconductor device is disclosed. The method comprises depositing an anti-nucleating layer on the interior surface of cavities within an ILD layer of the semiconductor device. This anti-nucleating layer prevents subsequently deposited dielectric layers from forming within the cavities. By preventing the formation of these layers, the capacitance is reduced, thereby resulting in improved semiconductor performance.
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