发明申请
- 专利标题： SiCOH DIELECTRIC
- 专利标题（中）： SiCOH电介质
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申请号： US12133043申请日： 2008-06-04
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公开(公告)号： US20080265381A1公开(公告)日： 2008-10-30
- 发明人: Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- 申请人： Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L23/58
摘要：
A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound.
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