发明申请
- 专利标题： SEMICONDUCTOR CHIP WITH POST-PASSIVATION SCHEME FORMED OVER PASSIVATION LAYER
- 专利标题（中）： 半导体芯片与钝化层之后形成的钝化方案
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申请号： US12132626申请日： 2008-06-04
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公开(公告)号： US20080265413A1公开(公告)日： 2008-10-30
- 发明人: Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin , Hsin-Jung Lo
- 申请人： Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin , Hsin-Jung Lo
- 申请人地址： TW Hsinchu
- 专利权人： MEGICA CORPORATION
- 当前专利权人： MEGICA CORPORATION
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
The invention provides a semiconductor chip comprising an interconnecting structure over said passivation layer. The interconnecting structure comprises a first contact pad connected to a second contact pad exposed by an opening in a passivation layer. A metal bump is on the first contact pad and over multiple semiconductor devices, wherein the metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns