发明申请
- 专利标题: METHOD AND STRUCTURE TO REDUCE CONTACT RESISTANCE ON THIN SILICON-ON-INSULATOR DEVICE
- 专利标题(中): 减薄绝缘体绝缘体器件接触电阻的方法与结构
-
申请号: US12174673申请日: 2008-07-17
-
公开(公告)号: US20080272412A1公开(公告)日: 2008-11-06
- 发明人: Brian J. Greene , Louis Lu-Chen Hsu , Jack Allan Mandelman , Chun-Yung Sung
- 申请人: Brian J. Greene , Louis Lu-Chen Hsu , Jack Allan Mandelman , Chun-Yung Sung
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A method (and system) of reducing contact resistance on a silicon-on-insulator device, including controlling a silicide depth in a source-drain region of the device.