发明申请
- 专利标题: PATTERN DEFECT INSPECTION APPARATUS AND METHOD
- 专利标题(中): 图案缺陷检查装置及方法
-
申请号: US12113781申请日: 2008-05-01
-
公开(公告)号: US20080273193A1公开(公告)日: 2008-11-06
- 发明人: Hidetoshi NISHIYAMA , Kei SHIMURA , Sachio UTO , Monori NOGUCHI
- 申请人: Hidetoshi NISHIYAMA , Kei SHIMURA , Sachio UTO , Monori NOGUCHI
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 优先权: JP2007-121741 20070502
- 主分类号: G01N21/00
- IPC分类号: G01N21/00 ; G01N21/55
摘要:
A pattern defect inspection apparatus capable of detecting minute defects on a sample with high sensitivity without generating speckle noise in signals is realized. Substantially the same region on a surface of a wafer is detected by using two detectors at mutually different timings. Output signals from the two detectors are summed and averaged to eliminate noise. Since a large number of rays of illumination light are not simultaneously irradiated to the same region on the wafer, a pattern defect inspection apparatus capable of suppressing noise resulting from interference of a large number of rays, eliminating noise owing to other causes and detecting with high sensitivity minute defects on the sample without the occurrence of speckle noise in the signal can be accomplished.
公开/授权文献
- US07746453B2 Pattern defect inspection apparatus and method 公开/授权日:2010-06-29
信息查询