An improved method for forming a capacitor. The method includes: providing a carrier with a channel therein; providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil; securing the metal foil into the channel with the first dielectric away from a channel floor; inserting an insulative material between the metal foil and each side wall of the channel; forming a cathode layer on the first dielectric between the insulative material; forming a conductive layer on the cathode layer and in electrical contact with the carrier; lap cutting the carrier parallel to the metal foil such that the valve metal is exposed; and dice cutting to form singulated capacitors.