发明申请
US20080273388A1 ADJUSTING RESISTANCE OF NON-VOLATILE MEMORY USING DUMMY MEMORY CELLS
有权
使用DUMMY MEMORY CELLS调节非易失性记忆电阻
- 专利标题： ADJUSTING RESISTANCE OF NON-VOLATILE MEMORY USING DUMMY MEMORY CELLS
- 专利标题（中）： 使用DUMMY MEMORY CELLS调节非易失性记忆电阻
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申请号： US11688874申请日： 2007-03-21
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公开(公告)号： US20080273388A1公开(公告)日： 2008-11-06
- 发明人: Henry Chin , Nima Mokhlesi , Dengtao Zhao
- 申请人： Henry Chin , Nima Mokhlesi , Dengtao Zhao
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
In some non-volatile storage systems, a block of data memory cells is manufactured with a dummy word line at the bottom of the block, at the top of the block, and/or at other locations. By selectively programming memory cells on the dummy word line(s), the resistances associated with the data memory cells can be changed to account for different programmed data patterns.
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