发明申请
US20080273403A1 STORAGE CELL DESIGN EVALUATION CIRCUIT INCLUDING A WORDLINE TIMING AND CELL ACCESS DETECTION CIRCUIT 失效
存储单元设计评估电路,包括WORDLINE时序和细胞检测电路

STORAGE CELL DESIGN EVALUATION CIRCUIT INCLUDING A WORDLINE TIMING AND CELL ACCESS DETECTION CIRCUIT
摘要:
A storage cell design evaluation circuit including a wordline timing and cell access detection circuit provides accurate information about state changes in static storage cells. A storage cell test row includes the access detection circuit, which provides the same loading during an access operation as the other cells in the array. The access detection circuit provides an output that may be probed without affecting the timing, read stability or writeability of the cell. The test row can test the clock and/or address timing of the row and may include a separate power supply rail for the row wordline driver, so that variation of access timing, read stability and writeability with wordline strength/access voltage can be determined. Multiple test rows may be cascaded among columns to provide a long delay line or ring oscillator for improved measurement resolution.
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