发明申请
- 专利标题： SiC semiconductor having junction barrier Schottky device
- 专利标题（中）： 具有接合屏障肖特基装置的SiC半导体
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申请号： US12078370申请日： 2008-03-31
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公开(公告)号： US20080277669A1公开(公告)日： 2008-11-13
- 发明人: Eiichi Okuno , Takeo Yamamoto
- 申请人： Eiichi Okuno , Takeo Yamamoto
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2007-125594 20070510
- 主分类号： H01L29/24
- IPC分类号： H01L29/24
摘要：
A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.
公开/授权文献
- US07816733B2 SiC semiconductor having junction barrier schottky device 公开/授权日：2010-10-19
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