公开(公告)号：US07825017B2

公开(公告)日：2010-11-02

申请号：US12406578

申请日：2009-03-18

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/44 ,  H01L21/441 ,  H01L31/0312 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0611 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/8083 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

摘要翻译： 设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极 并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。 钝化膜具有开口，表面电极通过该开口暴露在外部。 钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

公开(公告)号：US20080277669A1

公开(公告)日：2008-11-13

申请号：US12078370

申请日：2008-03-31

申请人： Eiichi Okuno ,  Takeo Yamamoto

发明人： Eiichi Okuno ,  Takeo Yamamoto

IPC分类号： H01L29/24

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861

摘要： A semiconductor device having a JBS diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening and an ohmic electrode on the substrate; a terminal structure having a RESURF layer in the drift layer surrounding the cell region; and multiple second conductive type layers in the drift layer on an inner side of the RESURF layer contacting the Schottky electrode. The second conductive type layers are separated from each other. The second conductive type layers and the drift layer provide a PN diode. Each second conductive type layer has a depth larger than the RESURF layer.

摘要翻译： 具有JBS二极管的半导体器件包括：SiC衬底; 衬底上的漂移层; 漂移层上的绝缘膜在电池区域具有开口; 具有肖特基电极的肖特基势垒二极管，其通过开口接触漂移层，并在衬底上接触欧姆电极; 具有围绕所述单元区域的所述漂移层中的RESURF层的端子结构; 以及在与肖特基电极接触的RESURF层的内侧上的漂移层中的多个第二导电类型层。 第二导电类型的层彼此分离。 第二导电类型层和漂移层提供PN二极管。 每个第二导电类型层的深度大于RESURF层。

公开(公告)号：US07855131B2

公开(公告)日：2010-12-21

申请号：US12385782

申请日：2009-04-20

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Takeo Yamamoto ,  Eiichi Okuno ,  Yukihiko Watanbe ,  Takashi Katsuno

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Takeo Yamamoto ,  Eiichi Okuno ,  Yukihiko Watanbe ,  Takashi Katsuno

IPC分类号： H01L21/322

CPC分类号： H01L29/47 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66143 ,  H01L29/872

摘要： A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

摘要翻译： 半导体器件的制造方法包括在碳化硅衬底中掺杂导电杂质的工艺，在碳化硅衬底的表面上形成覆盖层的工艺，激活掺杂在碳化硅衬底中的导电杂质的工艺， 在第一退火工艺之后氧化盖层的工艺，以及去除氧化的盖层的工艺。 优选的是，盖层由包括金属碳化物的材料形成。 由于金属碳化物的氧化开始温度相对较低，如果在盖层中包括金属碳化物，则盖层的氧化变得容易。 具体而言，优选盖层由氧化开始温度为1000℃以下的金属碳化物形成，例如碳化钽。

公开(公告)号：US07851882B2

公开(公告)日：2010-12-14

申请号：US12216182

申请日：2008-07-01

申请人： Eiichi Okuno ,  Takeo Yamamoto

发明人： Eiichi Okuno ,  Takeo Yamamoto

IPC分类号： H01L29/47

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861

摘要： A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.

摘要翻译： 碳化硅半导体器件包括在衬底上具有第一导电类型的漂移层，漂移层中的单元区域，漂移层上的肖特基电极和单元区域中的多个第二导电类型层。 第二导电型层彼此分离并与肖特基电极接触。 确定第二导电型层的尺寸和杂质浓度以及夹在第二导电型层之间的漂移层的一部分的尺寸和杂质浓度，使得第二导电类型层的电荷量等于 电荷量的部分。 因此，可以获得布置在漂移层的表面上以提供PN二极管的耐压JBS和低电阻率第二导电类型层。

公开(公告)号：US07838888B2

公开(公告)日：2010-11-23

申请号：US12076874

申请日：2008-03-25

申请人： Takeo Yamamoto ,  Naohiro Suzuki ,  Eiichi Okuno

发明人： Takeo Yamamoto ,  Naohiro Suzuki ,  Eiichi Okuno

IPC分类号： H01L29/24 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861

摘要： An SiC semiconductor device is provided, which comprises: a substrate made of silicon carbide and having a principal surface; a drift layer made of silicon carbide and disposed on the principal surface; an insulating layer disposed on the drift layer and including an opening; a Schottky electrode contacting with the drift layer through the opening; a termination structure disposed around an outer periphery of the opening; and second conductivity type layers disposed in a surface part of the drift layer, contacting the Schottky electrode, surrounded by the termination structure, and separated from one another. The second conductivity type layers include a center member and ring members. Each ring member surrounds the center member and is arranged substantially in a point symmetric manner with respect to the center member.

摘要翻译： 提供了一种SiC半导体器件，其包括：由碳化硅制成并具有主表面的衬底; 由碳化硅制成的漂移层，设置在主表面上; 绝缘层，设置在所述漂移层上并包括开口; 肖特基电极通过开口与漂移层接触; 设置在所述开口的外周周围的端接结构; 以及设置在漂移层的表面部分中的第二导电类型层，与由端接结构包围的肖特基电极接触并彼此分离。 第二导电类型层包括中心构件和环构件。 每个环构件围绕中心构件并且基本上相对于中心构件以点对称的方式布置。

公开(公告)号：US08324704B2

公开(公告)日：2012-12-04

申请号：US12659853

申请日：2010-03-23

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Hirokazu Fujiwara ,  Masaki Konishi ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Hirokazu Fujiwara ,  Masaki Konishi ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L29/24 ,  H01L29/47 ,  H01L21/04

CPC分类号： H01L29/47 ,  H01L21/0465 ,  H01L21/0495 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/872

摘要： A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.

摘要翻译： 具有肖特基势垒二极管的碳化硅半导体器件包括第一导电型碳化硅衬底，在衬底的第一表面上的第一导电型碳化硅漂移层，与漂移层形成肖特基接触的肖特基电极和欧姆 电极在基板的第二表面上。 肖特基电极包括与漂移层直接接触的氧化物层。 氧化物层由钼，钛，镍或这些元素中的至少两种的合金的氧化物制成。

公开(公告)号：US20090267082A1

公开(公告)日：2009-10-29

申请号：US12385594

申请日：2009-04-14

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi ,  Hirokazu Fujiwara

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi ,  Hirokazu Fujiwara

IPC分类号： H01L29/872 ,  H01L29/24 ,  H01L21/329

CPC分类号： H01L29/861 ,  H01L21/0495 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/872

摘要： A semiconductor device includes: a semiconductor element having a first surface and a second surface; a first electrode disposed on the first surface of the element; a second electrode disposed on the second surface of the element; and an insulation film covers a part of the first electrode, the first surface of the element and a part of a sidewall of the element. The above semiconductor device has small dimensions and a high breakdown voltage.

摘要翻译： 半导体器件包括：具有第一表面和第二表面的半导体元件; 设置在所述元件的第一表面上的第一电极; 设置在所述元件的第二表面上的第二电极; 并且绝缘膜覆盖第一电极的一部分，元件的第一表面和元件的侧壁的一部分。 上述半导体器件具有小的尺寸和高的击穿电压。

公开(公告)号：US20090008651A1

公开(公告)日：2009-01-08

申请号：US12216182

申请日：2008-07-01

申请人： Eiichi Okuno ,  Takeo Yamamoto

发明人： Eiichi Okuno ,  Takeo Yamamoto

IPC分类号： H01L29/24

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861

摘要： A silicon carbide semiconductor device includes a drift layer having first conductive type on a substrate, a cell region in the drift layer, a schottky electrode on the drift layer and multiple second conductive type layers in the cell region. The second conductive type layers are separated from each other and contact the schottky electrode. A size and an impurity concentration of the second conductive type layers and a size and an impurity concentration of a portion of the drift layer sandwiched between the second conductive type layers are determined so that a charge quantity of the second conductive type layers is equal to a charge quantity of the portion. Hereby, the pressure-proof JBS and low resistivity second conductive type layers arranged on a surface of the drift layer to provide a PN diode, can be obtained.

摘要翻译： 碳化硅半导体器件包括在衬底上具有第一导电类型的漂移层，漂移层中的单元区域，漂移层上的肖特基电极和单元区域中的多个第二导电类型层。 第二导电型层彼此分离并与肖特基电极接触。 确定第二导电型层的尺寸和杂质浓度以及夹在第二导电型层之间的漂移层的一部分的尺寸和杂质浓度，使得第二导电类型层的电荷量等于 电荷量的部分。 因此，可以获得布置在漂移层的表面上以提供PN二极管的耐压JBS和低电阻率第二导电类型层。

公开(公告)号：US20080296587A1

公开(公告)日：2008-12-04

申请号：US12153825

申请日：2008-05-27

申请人： Takeo Yamamoto ,  Eiichi Okuno

发明人： Takeo Yamamoto ,  Eiichi Okuno

IPC分类号： H01L29/15 ,  H01L29/24

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/1608

摘要： A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.

摘要翻译： 碳化硅半导体器件包括衬底; 具有第一导电类型的漂移层; 绝缘层; 肖特基电极 欧姆电极; 一个复活层; 和第二导电类型层。 漂移层和第二导电类型层提供多个PN二极管。 每个第二导电类型层相对于肖特基电极和漂移层之间的接触区域的中心具有径向宽度。 所述第二导电型层之一的径向宽度小于所述第二导电类型层中的另一导电类型层的径向宽度，所述第二导电类型层被设置为比所述第二导电类型层中的所述第二导电类型层更靠近所述接触区域的中心。

公开(公告)号：US07915705B2

公开(公告)日：2011-03-29

申请号：US12076871

申请日：2008-03-25

申请人： Takeo Yamamoto ,  Eiichi Okuno

发明人： Takeo Yamamoto ,  Eiichi Okuno

IPC分类号： H01L29/021

CPC分类号： H01L29/0692 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A SiC semiconductor device includes: a SiC substrate; a SiC drift layer on the substrate having an impurity concentration lower than the substrate; a semiconductor element in a cell region of the drift layer; an outer periphery structure including a RESURF layer in a surface portion of the drift layer and surrounding the cell region; and an electric field relaxation layer in another surface portion of the drift layer so that the electric field relaxation layer is separated from the RESURF layer. The electric field relaxation layer is disposed on an inside of the RESURF layer so that the electric field relaxation layer is disposed in the cell region. The electric field relaxation layer has a ring shape.

摘要翻译： SiC半导体器件包括：SiC衬底; 衬底上的SiC漂移层，其杂质浓度低于衬底; 漂移层的单元区域中的半导体元件; 包括在漂移层的表面部分中并围绕电池区域的RESURF层的外周结构; 以及在漂移层的另一表面部分中的电场弛豫层，使得电场弛豫层与RESURF层分离。 电场弛豫层设置在RESURF层的内侧，使得电场弛豫层设置在电池区域中。 电场弛豫层具有环形。