发明申请
- 专利标题: SCALABLE NONVOLATILE MEMORY
- 专利标题(中): 可扩展非易失性存储器
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申请号: US12120549申请日: 2008-05-14
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公开(公告)号: US20080285331A1公开(公告)日: 2008-11-20
- 发明人: E. James Torok , David Leslie Fleming , Edward Wuori , Richard Spitzer
- 申请人: E. James Torok , David Leslie Fleming , Edward Wuori , Richard Spitzer
- 申请人地址: US CA Berkeley
- 专利权人: INTEGRATED MAGNETOELECTRONICS CORP.
- 当前专利权人: INTEGRATED MAGNETOELECTRONICS CORP.
- 当前专利权人地址: US CA Berkeley
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H01S4/00
摘要:
Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
公开/授权文献
- US07911830B2 Scalable nonvolatile memory 公开/授权日:2011-03-22